Nonlinear quenching of densely excited states in wide-gap solids

被引：47

作者：

Grim, Joel Q. ^{[1
]}

Ucer, K. B. ^{[1
]}

Burger, A. ^{[2
]}

Bhattacharya, P. ^{[2
]}

Tupitsyn, E. ^{[2
]}

Rowe, E. ^{[2
]}

Buliga, V. M. ^{[2
]}

Trefilova, L. ^{[3
]}

Gektin, A. ^{[3
]}

Bizarri, G. A. ^{[4
]}

Moses, W. W. ^{[4
]}

Williams, R. T. ^{[1
]}

机构：

[1] Wake Forest Univ, Dept Phys, Winston Salem, NC 27109 USA

[2] Fisk Univ, Dept Phys, Nashville, TN 37208 USA

[3] Institute Scintillat Mat, UA-1001 Kharkov, Ukraine

[4] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

来源：

PHYSICAL REVIEW B | 2013年 / 87卷 / 12期

基金：

美国国家科学基金会;

关键词：

AUGER RECOMBINATION; LIGHT YIELD; SURFACE RECOMBINATION; NON-PROPORTIONALITY; CARRIER TRANSPORT; ROOM-TEMPERATURE; SINGLE-CRYSTALS; OPTICAL PHONONS; ALKALI HALIDES; LASER-PULSES;

D O I：

10.1103/PhysRevB.87.125117

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Dense interband electronic excitations on the order of 0.2 electron-hole pairs per nm(3) are encountered in a number of circumstances of fundamental and practical significance. We report measurements of the kinetic order and rate constants of nonlinear quenching in pure and doped materials with band gaps in the range from 6 eV down to 1.4 eV. The principal method used can be described as interband Z-scan luminescence yield with subpicosecond pulse excitations. A clear delineation of second-order and third-order quenching kinetics is found between oxide and iodide insulating crystals. This delineation suggests that the hot-electron thermalization rate mediated by LO phonon frequencies governs whether free carriers can pair as excitons within the time period of nonlinear quenching.

引用

页数：19

共 81 条

[1] Electronic structure and optical properties of CdMoO4 and CdWO4 [J].

Abraham, Y ;

Holzwarth, NAW ;

Williams, RT .

PHYSICAL REVIEW B, 2000, 62 (03) :1733-1741

[2]

Alekhin M. S., 2011, 11 INT C IN SCINT TH

[3]

[Anonymous], 1998, CHARACTERIZATION TEC, P655

[4] REFLECTIVITY OF BISMUTH-GERMANATE [J].

ANTONANGELI, F ;

ZEMA, N ;

PIACENTINI, M ;

GRASSANO, UM .

PHYSICAL REVIEW B, 1988, 37 (15) :9036-9041

[5] PICOSECOND OPTICAL MEASUREMENTS OF BAND-TO-BAND AUGER RECOMBINATION OF HIGH-DENSITY PLASMAS IN GERMANIUM [J].

AUSTON, DH ;

SHANK, CV ;

LEFUR, P .

PHYSICAL REVIEW LETTERS, 1975, 35 (15) :1022-1025

[6] Experimental Electron Mobility in ZnO: A Reassessment Through Monte Carlo Simulation [J].

Bertazzi, Francesco ;

Bellotti, Enrico ;

Furno, Enrico ;

Goano, Michele .

JOURNAL OF ELECTRONIC MATERIALS, 2009, 38 (08) :1677-1683

[7] An analytical model of nonproportional scintillator light yield in terms of recombination rates [J].

Bizarri, G. ;

Moses, W. W. ;

Singh, J. ;

Vasil'ev, A. N. ;

Williams, R. T. .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (04)

[8]

BURGER A, UNPUB, P10501

[9] MIDINFRARED PICOSECOND SPECTROSCOPY STUDIES OF AUGER RECOMBINATION IN INSB [J].

CHAZAPIS, V ;

BLOM, HA ;

VODOPYANOV, KL ;

NORMAN, AG ;

PHILLIPS, CC .

PHYSICAL REVIEW B, 1995, 52 (04) :2516-2521

[10] Unusually low surface recombination and long bulk lifetime in n-CdTe single crystals [J].

Cohen, R ;

Lyahovitskaya, V ;

Poles, E ;

Liu, A ;

Rosenwaks, Y .

APPLIED PHYSICS LETTERS, 1998, 73 (10) :1400-1402

← 1 2 3 4 5 6 7 8 9 →