Noise Properties of ZnO Nanowalls Deposited Using Rapid Thermal Evaporation Technology

被引：6

作者：

Chen, T. P. ^{[1
,2
]}

Hung, F. Y. ^{[3
]}

Chang, S. P. ^{[1
,2
]}

Chang, S. J. ^{[1
,2
]}

Wu, S. L. ^{[4
]}

Hu, Z. S. ^{[3
]}

机构：

[1] Natl Cheng Kung Univ, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[3] Natl Cheng Kung Univ, Inst Nanotechnol & Microsyst Engn, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan

[4] Cheng Shiu Univ, Dept Elect Engn, Kaohsiung 833, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2013年 / 25卷 / 03期

关键词：

Flicker noise; low temperature; nanowalls; ultraviolet (UV); ZnO; PHOTOLUMINESCENCE; GROWTH; NANOSTRUCTURES; NANOWIRE;

D O I：

10.1109/LPT.2012.2233731

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

ZnO nanowalls are rapidly grown on a glass substrate using a low-temperature thermal evaporation method, without the use of a catalyst and the pre-deposition of a ZnO seed layer on the substrate. Most of the ZnO nanowalls are grown vertically and are about 70-200-nm thick and 2-mu m long. The room-temperature photoluminescence spectra show a strong intrinsic ultraviolet (UV) emission and a weak defect-related orange emission. The ZnO nanowall UV sensor is highly sensitive to UV light, with an excellent UV-to-visible ratio and good flicker noise characteristics. This shows the strong potential of ZnO nanowalls for use in UV sensors. At an applied bias of 2 V, the noise equivalent power and the normalized detectivity of the ZnO nanowall UV sensor are 1.87 x 10(-10) W and 3.38 x 10(9) cm.Hz(0.5).W-1, respectively.

引用

页码：213 / 216

页数：4

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