Finite-element study of strain field in strained-Si MOSFET

被引：8

作者：

Liu, H. H. ^{[1
]}

Duan, X. F. ^{[1
]}

Xu, Q. X. ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

来源：

MICRON | 2009年 / 40卷 / 02期

关键词：

Strained-Si; MOSFET; Finite-element; LACBED; BEAM ELECTRON-DIFFRACTION; HOLE MOBILITY ENHANCEMENT; ELASTIC RELAXATION; SPECIMENS;

D O I：

10.1016/j.micron.2008.06.005

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

The strain field in the channel of a p-type meta I-oxide-semiconductor held effect transistor fabricated by integrating Ge pre-amorphization implantation for source/drain regions is evaluated using a finite-element method combining with large angle convergent-beam electron diffraction (LACBED). The finite-element calculation shows that there is a very large compressive strain in the top layer of the channel region caused by a low dose of Ge ion implantation in the source and drain extension regions. Moreover, a transition region is formed in the bottom of the channel region and the top of the Si substrate. These calculation results are in good agreement with the LACBED experiments. (c) 2008 Elsevier Ltd. All rights reserved.

引用

页码：274 / 278

页数：5

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