Estimations of bulk geometrically necessary dislocation density using high resolution EBSD

被引：118

作者：

Ruggles, T. J. ^{[1
]}

Fullwood, D. T. ^{[1
]}

机构：

[1] Brigham Young Univ, Dept Mech Engn, Provo, UT 84602 USA

来源：

ULTRAMICROSCOPY | 2013年 / 133卷

基金：

美国国家科学基金会;

关键词：

EBSD; Continuum dislocation microscopy; Dislocation density; Nye tensor; ELECTRON BACKSCATTER DIFFRACTION; ELASTIC-STRAIN; SINGLE-CRYSTALS; DISTRIBUTIONS; DEFORMATION; INDENTATION; PLASTICITY; FIELDS;

D O I：

10.1016/j.ultramic.2013.04.011

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

Characterizing the content of geometrically necessary dislocations (GNDs) in crystalline materials is crucial to understanding plasticity. Electron backscatter diffraction (EBSD) effectively recovers local crystal orientation, which is used to estimate the lattice distortion, components of the Nye dislocation density tensor (a), and subsequently the local bulk GND density of a material. This paper presents a complementary estimate of bulk GND density using measurements of local lattice curvature and strain gradients from more recent high resolution EBSD (HR-EBSD) methods. A continuum adaptation of classical equations for the distortion around a dislocation are developed and used to simulate random GND fields to validate the various available approximations of GND content. (C) 2013 Elsevier By. All rights reserved.

引用

页码：8 / 15

页数：8

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