Low-temperature aqueous solution processed fluorine-doped zinc tin oxide thin-film transistors

被引:20
作者
Jeon, Jun-Hyuck [1 ]
Hwang, Young Hwan [1 ]
Jin, JungHo [1 ]
Bae, Byeong-Soo [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, LOMC, Taejon 305701, South Korea
基金
新加坡国家研究基金会;
关键词
SOL-GEL; ZNO; XPS;
D O I
10.1557/mrc.2012.1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Novel fluorine-doped zinc tin oxide (ZTO: F) thin-film transistors (TFTs) have been fabricated using an aqueous solution process. Exploiting hydrolysis and condensation reactions in an aqueous solution process, organic-free ZTO: F thin films were fabricated at a low temperature of 250 degrees C. The fabricated TFT device shows a field-effect mobility of 2.85 cm(2)/V s, on-to-off current ratios exceeding 10(7), and sub-threshold swings of 0.83 V/dec. The ZTO: F TFT also displays high operational stability of Delta V-th = 1.73 V despite incorporation of a large amount of fluorine and use of a low-temperature annealing process. This is attributed to effective passivation of oxygen vacancy diffusion by metal fluoride bonds at the ZTO: F channel/gate dielectric interface.
引用
收藏
页码:17 / 22
页数:6
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