Low-temperature aqueous solution processed fluorine-doped zinc tin oxide thin-film transistors

被引：20

作者：

Jeon, Jun-Hyuck ^{[1
]}

Hwang, Young Hwan ^{[1
]}

Jin, JungHo ^{[1
]}

Bae, Byeong-Soo ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, LOMC, Taejon 305701, South Korea

来源：

MRS COMMUNICATIONS | 2012年 / 2卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

SOL-GEL; ZNO; XPS;

D O I：

10.1557/mrc.2012.1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Novel fluorine-doped zinc tin oxide (ZTO: F) thin-film transistors (TFTs) have been fabricated using an aqueous solution process. Exploiting hydrolysis and condensation reactions in an aqueous solution process, organic-free ZTO: F thin films were fabricated at a low temperature of 250 degrees C. The fabricated TFT device shows a field-effect mobility of 2.85 cm(2)/V s, on-to-off current ratios exceeding 10(7), and sub-threshold swings of 0.83 V/dec. The ZTO: F TFT also displays high operational stability of Delta V-th = 1.73 V despite incorporation of a large amount of fluorine and use of a low-temperature annealing process. This is attributed to effective passivation of oxygen vacancy diffusion by metal fluoride bonds at the ZTO: F channel/gate dielectric interface.

引用

页码：17 / 22

页数：6

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