Nature of Tunable Hole g Factors in Quantum Dots

被引：53

作者：

Ares, N. ^{[1
]}

Golovach, V. N. ^{[1
,2
,3
,4
]}

Katsaros, G. ^{[1
,2
,5
]}

Stoffel, M. ^{[6
]}

Fournel, F. ^{[7
]}

Glazman, L. I. ^{[8
]}

Schmidt, O. G. ^{[2
]}

De Franceschi, S. ^{[1
]}

机构：

[1] CEA INAC UJF Grenoble 1, SPSMS, F-38054 Grenoble 9, France

[2] IFW Dresden, Inst Integrat Nanosci, D-01069 Dresden, Germany

[3] Basque Fdn Sci, IKERBASQUE, E-48011 Bilbao, Spain

[4] Ctr Mixto CSIC UPV EHU, Ctr Fis Mat CFM MPC, E-20018 San Sebastian, Spain

[5] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria

[6] Nancy Univ, UMR 7198, Univ Lorraine, Inst Jean Lamour,CNRS, F-54506 Vandoeuvre Les Nancy, France

[7] CEA, LETI, MINATEC, F-38054 Grenoble 9, France

[8] Yale Univ, Dept Phys, New Haven, CT 06520 USA

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 110卷 / 04期

关键词：

SINGLE-ELECTRON SPIN; SEMICONDUCTOR NANOSTRUCTURES; CYCLOTRON-RESONANCE; MANIPULATION; SYSTEM; WELLS; BAND;

D O I：

10.1103/PhysRevLett.110.046602

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report an electric-field-induced giant modulation of the hole g factor in SiGe nanocrystals. The observed effect is ascribed to a so-far overlooked contribution to the g factor that stems from the mixing between heavy-and light-hole wave functions. We show that the relative displacement between the confined heavy-and light-hole states, occurring upon application of the electric field, alters their mixing strength leading to a strong nonmonotonic modulation of the g factor. DOI: 10.1103/PhysRevLett.110.046602

引用

页数：5

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