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Effect of annealing temperature on the supercapacitor behaviour of β-V2O5 thin films
被引:87
作者:
Jeyalakshmi, K.
[1
]
Vijayakumar, S.
[2
]
Nagamuthu, S.
[2
]
Muralidharan, G.
[2
]
机构:
[1] PSNA Coll Engn & Technol, Dept Phys, Dindigul 624622, India
[2] Deemed Univ, Gandhigram Rural Inst, Dept Phys, Gandhigram 624302, India
关键词:
Thin films;
Sol-gel chemistry;
Electrochemical measurements;
Impedance spectroscopy;
VANADIUM PENTOXIDE FILMS;
ELECTROCHEMICAL PROPERTIES;
OXIDE;
INTERCALATION;
COMPOSITES;
NIO;
D O I:
10.1016/j.materresbull.2012.11.054
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Vanadium pentoxide thin films are prepared via sol-gel spin coating method. The films coated on FTO and glass substrates are treated at different temperatures ranging from 250 degrees C to 400 degrees C. The structural, optical and electrochemical investigations are made. X-ray diffraction analysis shows the film to be composed of V2O5 in beta-phase up to annealing temperature of 350 degrees C and at 400 degrees C the structural transformation to alpha-phase is observed. FTIR spectrum shows the formation of V-O bond. The SEM images reveal the formation of nanopores. Optical absorption studies indicate a band gap of 2.2-2.4 eV. The supercapacitor behaviour is studied using cyclic voltammetery technique and electrochemical impedance analysis. The vanadium pentoxide films annealed at 300 degrees C for an hour exhibits a maximum specific capacitance of 346 F g(-1) at a scan rate of 5 mV s(-1). (C) 2012 Elsevier Ltd. All rights reserved.
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页码:760 / 766
页数:7
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