Effect of annealing temperature on the supercapacitor behaviour of β-V2O5 thin films

被引：87
作者：
Jeyalakshmi, K. [1 ]
Vijayakumar, S. [2 ]
Nagamuthu, S. [2 ]
Muralidharan, G. [2 ]
机构：
[1] PSNA Coll Engn & Technol, Dept Phys, Dindigul 624622, India
[2] Deemed Univ, Gandhigram Rural Inst, Dept Phys, Gandhigram 624302, India
来源：
MATERIALS RESEARCH BULLETIN | 2013年 / 48卷 / 02期
关键词：
Thin films; Sol-gel chemistry; Electrochemical measurements; Impedance spectroscopy; VANADIUM PENTOXIDE FILMS; ELECTROCHEMICAL PROPERTIES; OXIDE; INTERCALATION; COMPOSITES; NIO;
D O I：
10.1016/j.materresbull.2012.11.054
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Vanadium pentoxide thin films are prepared via sol-gel spin coating method. The films coated on FTO and glass substrates are treated at different temperatures ranging from 250 degrees C to 400 degrees C. The structural, optical and electrochemical investigations are made. X-ray diffraction analysis shows the film to be composed of V2O5 in beta-phase up to annealing temperature of 350 degrees C and at 400 degrees C the structural transformation to alpha-phase is observed. FTIR spectrum shows the formation of V-O bond. The SEM images reveal the formation of nanopores. Optical absorption studies indicate a band gap of 2.2-2.4 eV. The supercapacitor behaviour is studied using cyclic voltammetery technique and electrochemical impedance analysis. The vanadium pentoxide films annealed at 300 degrees C for an hour exhibits a maximum specific capacitance of 346 F g(-1) at a scan rate of 5 mV s(-1). (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：760 / 766
页数：7
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