Fully CMOS integrated low voltage 100 MHz MEMS resonator

被引：16

作者：

Uranga, A ^{[1
]}

Teva, J

Verd, J

López, JL

Torres, E

Esteve, J

Abadal, G

Pérez-Murano, E

Barniol, N

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, E-08193 Barcelona, Spain

[2] Ctr Nacl Microelect, Barcelona, Spain

来源：

ELECTRONICS LETTERS | 2005年 / 41卷 / 24期

关键词：

D O I：

10.1049/el:20053473

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The development of a novel fully integrated microelectromechanical system (MEMS) for RF purposes is presented. It is composed of a paddle polysilicon micro-resonator electrostatically excited and a capacitive CMOS read-out amplifier. The micro-resonator is fabricated directly on a commercial CMOS technology, only requiring a wet etching process for the release of the resonant structure after the full CMOS integration. Electrical characterisation of the on-chip resonant device has been performed showing a resonance frequency near 100 MHz.

引用

页码：1327 / 1328

页数：2