Growth and structure of singly oriented single-layer tungsten disulfide on Au(111)

被引：27

作者：

Bignardi, Luca ^{[1
,2
]}

Lizzit, Daniel ^{[1
]}

Bana, Harsh ^{[2
,8
]}

Travaglia, Elisabetta ^{[2
]}

Lacovig, Paolo ^{[1
]}

Sanders, Charlotte E. ^{[3
,9
]}

Dendzik, Maciej ^{[3
,10
]}

Michiardi, Matteo ^{[3
,11
]}

Bianchi, Marco ^{[3
]}

Ewert, Moritz ^{[4
,5
]}

Buss, Lars ^{[4
]}

Falta, Jens ^{[4
,5
]}

Flege, Jan Ingo ^{[4
,5
,12
]}

Baraldi, Alessandro ^{[1
,2
,6
]}

Larciprete, Rosanna ^{[7
]}

Hofmann, Philip ^{[3
]}

Lizzit, Silvano ^{[1
]}

机构：

[1] Elettra Sincrotrone Trieste SCpA, AREA Sci Pk,Str Statale 14,Km 163-5, I-34149 Trieste, Italy

[2] Univ Trieste, Dept Phys, Via Valerio 2, I-34127 Trieste, Italy

[3] Aarhus Univ, Dept Phys & Astron, Interdisciplinary Nanosci Ctr iNANO, Ny Munkegade 120, DK-8000 Aarhus C, Denmark

[4] Univ Bremen, Inst Solid State Phys, Otto Hahn Allee 1, D-28359 Bremen, Germany

[5] MAPEX Ctr Mat & Proc, Bremen, Germany

[6] CNR, Lab TASC, IOM, AREA Sci Pk,Str Statale 14,Km 163-5, I-34149 Trieste, Italy

[7] CNR, Inst Complex Syst, Via Taurini 19, I-00185 Rome, Italy

[8] Katholieke Univ Leuven, Inst Kern Stralingsfys, Dept Phys & Astron, Celestijnenlaan 200D, B-3001 Leuuven, Belgium

[9] Cent Laser Facil STFC Rutherford Appleton Lab, Didcot OX11 0QX, Berks, England

[10] Fritz Haber Inst Max Planck Soc, Dept Phys Chem, Faradayweg 4-6, D-14915 Berlin, Germany

[11] Univ British Columbia, Quantum Matter Inst, 2355 East Mall, Vancouver, BC V6T 1Z4, Canada

[12] Brandenburg Univ Technol Cottbus Senftenberg, Inst Phys, Konrad Zuse Str, D-03046 Cottbus, Germany

来源：

PHYSICAL REVIEW MATERIALS | 2019年 / 3卷 / 01期

关键词：

EPITAXIAL-GROWTH; VALLEY POLARIZATION; MOS2; OPTOELECTRONICS;

D O I：

10.1103/PhysRevMaterials.3.014003

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A singly oriented, single layer of tungsten disulfide (WS2) was epitaxially grown on Au(111) and characterized at the nanoscale by combining photoelectron spectroscopy, photoelectron diffraction, and low-energy electron microscopy. Fast x-ray photoelectron spectroscopy revealed that the growth of a single crystalline orientation is triggered by choosing a low W evaporation rate and performing the process with a high temperature of the substrate. Information about the single orientation of the layer was obtained by acquiring x-ray photoelectron diffraction patterns, revealing a 1H polytype for the WS2 layer and, moreover, determining the structural parameters and registry with the substrate. The distribution, size, and orientation of the WS2 layer were further ascertained by low-energy electron microscopy.

引用

页数：8

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