Avalanche semiconductor radiation detectors

被引：22

作者：

Sadygov, ZY

Zheleznykh, IM

Malakhov, NA

Jejer, VN

Kirillova, TA

机构：

[1] RUSSIAN ACAD SCI, INST NUCL RES, RU-117312 MOSCOW, RUSSIA

[2] AZERBAIJAN ACAD SCI, INST PHYS, BAKU 370143, AZERBAIJAN

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1996年 / 43卷 / 03期

关键词：

D O I：

10.1109/23.510748

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Operation of novel avalanche semiconductor detector, produced on the basis of heterojunctions Si - SiC and Si - SixOy is described. A uniform avalanche process with gain from 10(3) to 10(5) can be reached depending on the conductivity of. SiC and SixOy layers. Two types of avalanche photodetectors designed for applications in wavelength range 500 - 1000 nm with quantum efficiency 60 +/- 10 % (650nm) and 200 - 700 mn with quantum efficiency 60 +/- 15 % (450nm) are presented.

引用

页码：1009 / 1013

页数：5

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