Amorphization of thin Si layers by arsenic ion implantation

被引：6

作者：

Sakiyama, K ^{[1
]}

Naka, T ^{[1
]}

Kaneko, S ^{[1
]}

Onda, T ^{[1
]}

Hara, T ^{[1
]}

机构：

[1] HOSEI UNIV,DEPT ELECT ENGN,KOGANEI,TOKYO 184,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1996年 / 143卷 / 03期

关键词：

D O I：

10.1149/1.1836535

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Annealing of an amorphized Si layer formed by As+ implantation into an SOI (silicon-on-insulator) Si layer was performed. Arsenic ions are implanted at 100 keV and 5.0 x 10(15) ions/cm(2) into thin (56 nm thick) and thick (1.5 mu m thick) Si layers. Rutherford backscattering spectrometry and transmission electron microscope measurements show the formation of a 130 nm thick amorphous layer by this implantation. In the thick Si layer, recrystallization occurred at the amorphous/crystalline interface with an annealing at 850 degrees C. However, no recrystallization occurred within the thin Si layer because a crystalline interface did not exist. Thus, a high resistivity, amorphous n-Si layer with low electron mobility was formed.

引用

页码：L67 / L69

页数：3

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