Characteristics of Single-Chip GaN-Based Alternating Current Light-Emitting Diode

被引：21

作者：

Yen, Hsi-Hsuan ^{[1
]}

Kuo, Hao-Chung ^{[1
]}

Yeh, Wen-Yung ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[2] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 310, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2008年 / 47卷 / 12期

关键词：

GaN; light-emitting diode; alternating current; Wheatstone Bridge;

D O I：

10.1143/JJAP.47.8808

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this study, a GaN-based alternating current light-emitting diode (AC-LED) with 34 numbers of microchips illuminated in each bias direction was fabricated. After calibrating the integration duration, the light output powers of the AC-LED driven by AC and DC were 388.1 and 312.8 mW when the input power was about I W, respectively. The flickering illumination mode of the AC-LED driven by AC decreased the heat accumulation and revealed a higher energy utilization efficiency than that of the AC-LED driven by DC. The larger blue shift and smaller full width at half maximum of the AC-LED driven by AC than those of the AC-LED driven by DC were also observed. [DOI: 10.1143/JJAP.47.8808]

引用

页码：8808 / 8810

页数：3

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