Transport properties of AlGaAs/GaAs parabolic quantum wells

被引：21

作者：

Gao, K. H. ^{[1
]}

Yu, G. ^{[1
]}

Zhou, Y. M. ^{[1
]}

Zhou, W. Z. ^{[1
,2
]}

Lin, T. ^{[1
]}

Chu, J. H. ^{[1
]}

Dai, N. ^{[1
]}

SpringThorpe, A. J. ^{[3
]}

Austing, D. G. ^{[3
]}

机构：

[1] Chinese Acad Sci, Natl Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China

[2] E China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200062, Peoples R China

[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 01期

关键词：

FIELD;

D O I：

10.1063/1.3063690

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the magnetotransport properties of 100 nm wide parabolic quantum wells and observe an enhancement of the Hall resistance in one sample but not the other. This phenomenon is likely related to the effective thickness of the electronic slab. We also observe a parabolic negative magnetoresistance originating from electron-electron interactions when only one subband is occupied in one of the samples. The interaction correction to the Drude conductivity is extracted using two methods. We find that the extracted interaction correction increases with increasing tilted angle, for which two possible explanations are given. (C) 2009 American Institute of Physics.

引用

页数：5

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