Fe-X (X = B, N) binary compounds: First-principles calculations of electronic structures, theoretic hardness and magnetic properties

被引:12
|
作者
Hui, Liangliang [1 ]
Xie, Zhongjing [1 ]
Li, Chunmei [1 ]
Chen, Zhi-Qian [1 ]
机构
[1] Southwest Univ, Fac Mat & Energy, Chongqing 400715, Peoples R China
基金
中国国家自然科学基金;
关键词
Iron borides and nitrides; Electronic structures; Bonding hardness; Magnetism; CRYSTAL-STRUCTURE; 1ST PRINCIPLES; TRANSITION; STABILITY; MOSSBAUER; CEMENTITE; NITRIDES; FLUID;
D O I
10.1016/j.jmmm.2017.12.011
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The first-principles calculations are implemented to investigate the electronic structures, theoretic hardness and magnetic properties of iron borides and nitrides with four different crystal systems containing hexagonal (FeB2, epsilon-Fe3N), tetragonal (Fe2B, alpha"-Fe16N2), orthorhombic (alpha-FeB, theta-Fe3B, lambda-Fe2N), and cubic (zb-FeN, rs-FeN, gamma'-Fe4N, gamma-Fe23B6) phase. The calculated lattice parameters using RPBE meet well with the experimental results. The cohesive energy and formation enthalpy values indicate the Fe-X (X= B, N) binary compounds are thermodynamically stable. Meanwhile, the h-FeB2 is most difficult phase for experimental synthesis among these interstitial compounds. Moreover, magnetic properties are discussed and show that the mean magnetic moments of o-Fe3B and c-Fe23B6 with the values of 2.227 mu(B) and 2.256 mu(B) per iron atom are approaching to that of pure iron (2.32 mu(B)) while the c-Fe4N and t-Fe16N2 with the values of 2.51 and 2.48 mu(B) are beyond that of pure alpha-Fe. The c-FeN phase shows nonmagnetic in zb-style while rs-type shows antiferromagnetic with a value of 2.52 mu(B). Furthermore, the average bonding length and Mulliken population combined with electronic structures are also analysed in this paper which provide that strong Fe-X and X-X covalent bonds are responsible for high hardness. Finally, the theoretic hardness of X-X, Fe-X and Fe-Fe bonds is predicted by semi empirical hardness theory. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:761 / 769
页数:9
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