Colloidal InSb Nanocrystals

被引：121

作者：

Liu, Wenyong ^{[1
,2
]}

Chang, Angela Y. ^{[3
,4
]}

Schaller, Richard D. ^{[3
,4
]}

Talapin, Dmitri V. ^{[1
,2
,3
]}

机构：

[1] Univ Chicago, Dept Chem, Chicago, IL 60637 USA

[2] Univ Chicago, James Frank Inst, Chicago, IL 60637 USA

[3] Argonne Natl Lab, Ctr Nanoscale Mat, Argonne, IL 60439 USA

[4] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2012年 / 134卷 / 50期

基金：

美国国家科学基金会;

关键词：

BEAM EPITAXIAL-GROWTH; QUANTUM DOTS; SEMICONDUCTOR NANOCRYSTALS; SURFACE LIGANDS; LEVEL STRUCTURE; CONFINEMENT; GAAS; INP;

D O I：

10.1021/ja309821j

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report the colloidal synthesis of monodisperse nanocrystals (NCs) of InSb, which is an important member of III-V semiconductor family. Colloidal InSb NC quantum dots showed well-resolved excitonic transitions in the near-infrared spectral range, with the optical band gaps tunable from similar to 1.03 eV (1200 nm) to similar to 0.71 eV (1750 nm) corresponding to 3.3 and 6.5 nm LnSb NCs, respectively. We observed size-tunable band edge photoluminescence that could be significantly enhanced by growing InSb/CdSe or InSb/CdS core-shell nanostructures. Films of InSb NCs capped with S-2-ions showed ambipolar charge transport.

引用

页码：20258 / 20261

页数：4

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