Hydrothermal growth and characterization of nitrogen-doped ZnO crystals

被引：26

作者：

Wang, BG

Callahan, MJ

Bouthillette, LO

Xu, CC

Suscavage, MJ

机构：

[1] USAF, Res Lab, Solid State Sci Corp, SNHC,Sensors Directorate, Hanscom AFB, MA 01731 USA

[2] Solid State Sci Corp, Hollis, NH 03049 USA

[3] W Virginia Univ, Dept Phys, Morgantown, WV 26506 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2006年 / 287卷 / 02期

关键词：

p-type; nitrogen-doped ZnO; hydrothermal growth; Hall measurements; photoluminescence;

D O I：

10.1016/j.jcrysgro.2005.11.049

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Hydrothermal growth of nitrogen-doped ZnO crystals was performed in alkaline solutions with the addition of 1 N LiNO3 at T-dissoultion/T-growth = 365 degrees C/350 degrees C, and in a 20% NH4OH solution at 490 degrees C/475 degrees C, respectively. An average nitrogen concentration of approximately 10(18) at atom/cm(3) was incorporated in the crystals. X-ray diffraction showed that the crystals grown from the 1 M LiNO3 solution are of high quality, exhibiting high resistivity. The spontaneously nucleated crystals were obtained from the NH40H solution; a weak peak at 3.236 eV and a peak at 3.332 eV of photoluminescence were found at 18 K from these crystals after annealing at 600 degrees C for 2h. The emission peaks correspond to the nitrogen-associated donor-acceptor pair (DAP) and electron-acceptor emissions in ZnO:N prepared by other techniques reported in the literature. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：381 / 385

页数：5

共 20 条

[11] Ma Y., IN PRESS
[12] Growth of 2 inch ZnO bulk single crystal by the hydrothermal method
Maeda, K
Sato, M
Niikura, I
Fukuda, T
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 20 (04) : S49 - S54
[13] Growth of p-type zinc oxide films by chemical vapor deposition
Minegishi, K
Koiwai, Y
Kikuchi, Y
Yano, K
Kasuga, M
Shimizu, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (11A): : L1453 - L1455
[14] MONCHAMP RR, 1964, AFMLTR67144
[15] RETRACTED: Recent progress in processing and properties of ZnO (Retracted Article)
Pearton, SJ
Norton, DP
Ip, K
Heo, YW
Steiner, T
[J]. PROGRESS IN MATERIALS SCIENCE, 2005, 50 (03) : 293 - 340
[16] Nitrogen doping and p type conductivity of ZnO films grown by vapor phase epitaxy
Rommeluère, JF
Svob, L
Mimila-Arroyo, J
Hassani, S
Jomard, F
Amiri, G
Lusson, A
Salle, V
Galtier, P
Marfaing, Y
[J]. QUANTUM SENSING AND NANOPHOTONIC DEVICES, 2004, 5359 : 279 - 283
[17] Suscavage M, 1999, MRS INTERNET J N S R, V4, part. no.
[18] Epitaxial growth of ZnO films
Triboulet, R
Perrière, J
[J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2003, 47 (2-3) : 65 - 138
[19] Epitaxial growth of NH3-doped ZnO thin films on ⟨02(2)over-bar-4⟩ oriented sapphire substrates
Wang, JZ
Du, GT
Zhao, BJ
Yang, XT
Zhang, YT
Ma, Y
Liu, DL
Chang, YC
Wang, HS
Yang, HJ
Yang, SR
[J]. JOURNAL OF CRYSTAL GROWTH, 2003, 255 (3-4) : 293 - 297
[20] Photoluminescence characterization of excitonic centers in ZnO epitaxial films
Watanabe, M
Sakai, M
Shibata, H
Tampo, H
Fons, P
Iwata, K
Yamada, A
Matsubara, K
Sakurai, K
Ishizuka, S
Niki, S
Nakahara, K
Takasu, H
[J]. APPLIED PHYSICS LETTERS, 2005, 86 (22) : 1 - 3

← 1 2 →