Angled stripe InGaAsP/InP SLED fabricated by low damage inductively coupled plasma dry etching

We successfully fabricated the angled strip DC-PBH style SLED devices by using low damage ICP dry etching technology. The mesa of DC-PBH SLED was formed by Cl-2/N-2 ICP dry etching process. The low DC bias (<100 eV) of ICP etching technology can reduce the damage caused by ordinary RIE technique and Cl-2/N-2 based process can get rid of chemical damage caused by CH4/H-2. High out-put power SLED device was obtained by using low damage ICP dry etching, the out-put power is 2 mW at 100 mA inject current (CW) at 25degreesC, Through optimized the angle of the active strip and AR optical film design, the full width of the half maximum (FWHM) of the spectrum at 2 mW out-put power can reach 46.4 nm and the ripple of the SLED spectrum is low down to 0.4 dB.