Performance of an irradiated LHCb prototype p-on-n silicon microstrip detector

被引:4
|
作者
Bowcock, T
Buytaert, J
Casse, G
Charles, M
Dijkstra, H
Collins, P [1 ]
Dormond, O
Ferro-Luzzi, M
Fiedler, F
Frei, R
Gagliardi, G
Jalocha, P
Libby, J
Ketel, T
Parkes, C
Parzefall, U
Ruf, T
Tareb, M
Teubert, F
Wright, V
Witek, M
机构
[1] CERN, Div EP, CH-1211 Geneva 23, Switzerland
[2] Univ Liverpool, Oliver Lodge Lab, Liverpool L69 3BX, Merseyside, England
[3] Univ Oxford, Dept Nucl & Particle Phys, Oxford OX1 3RH, England
[4] Univ Lausanne, Inst Phys Hautes Energies, CH-1015 Dorigny 20, Switzerland
[5] Inst Nucl Phys, High Energy Dept, PL-30055 Krakow, Poland
[6] NIKHEF H, NL-1098 SJ Amsterdam, Netherlands
关键词
D O I
10.1016/S0168-9002(01)01812-5
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
A prototype silicon detector for the LHCb experiment has been irradiated non-uniformly with fluences of up to 10(15) p/cm(2) of 24 GeV protons and tested with LHC speed electronics in a test beam, After doses equivalent to one year of operation at the LHC, the detector was operational, and deteriorated after higher doses. The performance of this detector identifies particular risks associated with a p-on-n fine pitch design with a double metal layer. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码:291 / 295
页数:5
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