Design optimization of gate-all-around (GAA) MOSFETs

被引：82

作者：

Song, JY ^{[1
]}

Choi, WY

Park, JH

Lee, JD

Park, BG

机构：

[1] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea

[2] Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2006年 / 5卷 / 03期

关键词：

cylindrical-channel MOSFETs; double-gate (DG) MOSFET; gate-all-around (GAA) MOSFET;

D O I：

10.1109/TNANO.2006.869952

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design of gate-all-around (GAA) MOSFETs was optimized and compared with that of double-gate MOSFETs. We discussed the optimal ratio of the fin width to the gate length and investigated short-channel effects of GAA MOSFETs. Using three-dimensional simulations, we confirmed that short-channel effects were properly suppressed although the fin width was the same as the gate length in GAA MOSFETs. Finally, we compared cubical channel GAA MOSFETs with cylindrical-channel ones. As a result, it was observed that the latter showed the maximized ratio of the fin width to the gate length up to 1.2.

引用

页码：186 / 191

页数：6

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