Study of Cr overlayer on InP(100) by synchrotron radiation photoemission

被引：0

作者：

Zhang, FP

Xu, PS

Xu, SH

Lu, ED

Yu, XJ

Zhang, XY

机构：

[1] Natl. Synchrt. Radiation Laboratory, Univ. of Sci. and Technol. of China

来源：

APPLIED SURFACE SCIENCE | 1997年 / 115卷 / 04期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1016/S0169-4332(96)00859-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The growth and electronic structure of the Cr/InP(100) interface are studied by synchrotron radiation photoemission. At the first stage of growth, Cr atoms cover the whole InP surface. With increasing Cr coverage, Cr reacts strongly with the substrate and creates a disruptive interface. The electronic structure of the ultrathin Cr film is found to be different from that of bulk Cr film, and the possibility that magnetic ordering exists in the ultrathin overlayer of Cr is proposed. (C) 1997 Elsevier Science B.V.

引用

页码：361 / 364

页数：4

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