Design of Traveling Wave Electrode for High-speed Silicon Modulators

被引：0
|
作者：
Zhou, Yanyang [1 ]
Zhou, Linjie [1 ]
Sun, Xiaomeng [1 ]
Chen, Jianping [1 ]
机构：
[1] Shanghai Jiao Tong Univ, State Key Lab Adv Opt Commun Syst & Networks, Dept Elect Engn, Shanghai 200240, Peoples R China
来源：
2012 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP) | 2012年
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We design a traveling wave electrode to drive carrier-depletion-based silicon modulators. By optimizing the electrode on top of the active region and the connection transmission line, the impedance can be matched to 50 Ohm. The 3-dB bandwidth of the modulator can be up to 40 GHz, mainly limited by the velocity mismatch.
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页数：3
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