Silicon Oxide Thin Films Prepared by Vacuum Evaporation and Sputtering Using Silicon Monoxide

Dependency of structural properties of silicon oxide thin films prepared using silicon monoxide source material on preparation method has been studied. The structural properties of the silicon oxide films prepared by three methods, vacuum evaporation using e-beam, rf-sputtering, and vacuum evaporation employing resistive heating are studied by IR absorption and Raman spectra. Due to the results, it is found that the structure of the films depends significantly on preparation methods. The films prepared by e-beam evaporation exhibits similar structural properties of SiO2. The film by rf-sputtering shows Raman spectrum corresponds to significantly random amorphous silicon oxide structure. The film by evaporation employing resistive heating exhibits Raman spectrum that has been explained by silicon-oxygen ring structure.