Coulomb Blockade in Silicon Devices: Electronic Structure of Quantum Dots

被引：1

作者：

See, J. ^{[1
]}

Dollfus, P. ^{[1
]}

Galdin-Retailleau, S. ^{[1
]}

Hesto, P. ^{[1
]}

机构：

[1] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2003年 / 2卷 / 2-4期

关键词：

quantum dot; Coulomb blockade; single electron device;

D O I：

10.1023/B:JCEL.0000011469.24091.ca

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This article presents a self-consistent 3D Poisson-Schrodinger calculation based on the density functional theory for silicon quantum dot under bias voltage. For various shapes and sizes of quantum dot surrounded by silicon dioxide, the energy levels and density are calculated as a function of the applied voltage and the number of stored electrons. The potential properties of such nanostructures for Coulomb blockade operation are deduced.

引用

页码：449 / 453

页数：5

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