Tailoring the electronic transitions of NdNiO3 films through (111)pc oriented interfaces

被引：63

作者：

Catalano, S. ^{[1
]}

Gibert, M. ^{[1
]}

Bisogni, V. ^{[2
]}

He, F. ^{[3
]}

Sutarto, R. ^{[3
]}

Viret, M. ^{[1
,4
]}

Zubko, P. ^{[1
]}

Scherwitzl, R. ^{[1
]}

Sawatzky, G. A. ^{[5
]}

Schmitt, T. ^{[2
]}

Triscone, J. -M. ^{[1
]}

机构：

[1] Univ Geneva, Dept Quantum Matter Phys, CH-1211 Geneva, Switzerland

[2] Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland

[3] Canadian Light Source, Saskatoon, SK S7N 2V3, Canada

[4] CEA Saclay, Serv Phys Etat Condense, CNRS, UMR 3680, F-91191 Gif Sur Yvette, France

[5] Univ British Columbia, Dept Phys & Astron, Vancouver, BC V6T 1Z1, Canada

来源：

APL MATERIALS | 2015年 / 3卷 / 06期

基金：

瑞士国家科学基金会; 加拿大自然科学与工程研究理事会; 欧洲研究理事会;

关键词：

METAL-INSULATOR-TRANSITION; PHASE; PR; ND;

D O I：

10.1063/1.4919803

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Bulk NdNiO3 and thin films grown along the pseudocubic (001)(pc) axis display a 1st order metal to insulator transition (MIT) together with a Neel transition at T = 200 K. Here, we show that for NdNiO3 films deposited on (111)(pc) NdGaO3, the MIT occurs at T = 335 K and the Neel transition at T = 230 K. By comparing transport and magnetic properties of layers grown on substrates with different symmetries and lattice parameters, we demonstrate a particularly large tuning when the epitaxy is realized on (111)(pc) surfaces. We attribute this effect to the specific lattice matching conditions imposed along this direction when using orthorhombic substrates. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

引用

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