Ohmic contacts to p-type ZnTe using electroless Pd

被引：34

作者：

Nishio, M ^{[1
]}

Guo, QX ^{[1
]}

Ogawa, H ^{[1
]}

机构：

[1] Saga Univ, Fac Sci & Engn, Dept Elect & Elect Engn, Saga 8408502, Japan

来源：

THIN SOLID FILMS | 1999年 / 343卷

关键词：

p-ZnTe; ohmic contact; electroless deposition; Pd; Auger depth profile;

D O I：

10.1016/S0040-6090(98)01692-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The characterization of electroless Pd contacts to p-ZnTe has been carried out by measuring the current-voltage curves and Auger sputter depth profiles. On the basis of the shape of the I-V characteristics, it can be concluded that electroless Pd makes a contact of much better quality than electroless Au and Pt contacts. The best contacts are achievable for Pd electrode by annealing at 200 degrees C. The specific contact resistance under this condition is estimated to be as low as 6 x 10(-4) Ohm cm(2) for p-ZnTe with a hole concentration of 3 x 10(17) cm(-3) by the method of Cox and Strack. For electroless Pd, Pd-ZnTe alloy is formed. On the other hand, electroless Au leaves oxygen contamination near the interface between ZnTe and metal, whereas electroless Pt brings out the Te intermediate layer. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：508 / 511

页数：4

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