Challenges and developments of copper wire bonding technology

被引：76

作者：

Liu, Peisheng ^{[1
,2
,3
]}

Tong, Liangyu ^{[1
,2
]}

Wang, Jinlan ^{[1
]}

Shi, Lei ^{[2
]}

Tang, Hao ^{[2
]}

机构：

[1] Nantong Univ, Jiangsu Key Lab ASCI Design, Nantong 226019, Peoples R China

[2] Nantong Fujitsu Microelect Co Ltd, Nantong 226006, Peoples R China

[3] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

来源：

MICROELECTRONICS RELIABILITY | 2012年 / 52卷 / 06期

关键词：

AIR BALL FORMATION; ALUMINUM; GOLD; RELIABILITY; MICROSTRUCTURE; INTERMETALLICS; IMC; AL;

D O I：

10.1016/j.microrel.2011.12.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Copper wire bonding has been studied for more than two decades. While copper wire bonding has many advantages over gold wire bonding, many challenges have to be solved to meet its application requirements. This paper presents the measures to overcome Cu oxidation, the optimization of bonding parameters and the improvement in capillary design. The reliability mechanism of copper wire bonding is described from the standpoints of IMC growth, pad Al squeeze and the ability of wire looping. The challenges of copper wire bonding on low-k wafers and some solutions are also briefly introduced. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：1092 / 1098

页数：7

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2010 12TH ELECTRONICS PACKAGING TECHNOLOGY CONFERENCE (EPTC), 2010, :479-483

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