ICP-CVD μ-Si Layers Optimization for Strain Gauges on Flexible Substrates

被引：5

作者：

Castro, Fatima Garcia ^{[1
]}

de Sagazan, Olivier ^{[1
]}

Coulon, Nathalie ^{[1
]}

Simon, Claude ^{[1
]}

Le Bihan, France ^{[1
]}

机构：

[1] Univ Rennes, IETR, CNRS, UMR 6164, F-35000 Rennes, France

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2020年 / 315卷 / 315期

关键词：

ICP-CVD; PECVD; Strain Gauges; TLM; mu-Si doped; flexible electronics; low temperature electronics; strain gauges; fabrication; CHEMICAL-VAPOR-DEPOSITION; LOW-TEMPERATURE GROWTH; MICROCRYSTALLINE SILICON; THIN-FILMS; POLYSILICON; TRANSISTORS; RESISTANCE; HYDROGEN; SENSOR; TFT;

D O I：

10.1016/j.sna.2020.112261

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low Temperature mu-Si layers were performed in a Corial Inductively Coupled Plasma Chemical Vapour Deposition (ICP-CVD) system. Doped mu-Si layers have been investigated in terms of resistivity, contact resistance, crystalline fraction and Gauge Factor. Some parameters have been identified to increase the Gauge Factor (GF) or the crystalline fraction (Fc). Strain gauges performed on 25 mu m thick polyimide (PI) film have been tested to show the interest of the ICP-CVD mu-Si technology in the field of pressure sensors. (c) 2020 Elsevier B.V. All rights reserved.

引用

页数：11

共 40 条

[1] Fabrication of a strain sensor for bone implant failure detection based on piezoresistive doped nanocrystalline silicon [J].

Alpuim, P. ;

Filonovich, S. A. ;

Costa, C. M. ;

Rocha, P. F. ;

Vasilevskiy, M. I. ;

Lanceros-Mendez, S. ;

Frias, C. ;

Marques, A. Torres ;

Soares, R. ;

Costa, C. .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2008, 354 (19-25) :2585-2589

[2] Study of the piezoresistivity of doped nanocrystalline silicon thin films [J].

Alpuim, P. ;

Gaspar, J. ;

Gieschke, P. ;

Ehling, C. ;

Kistner, J. ;

Goncalves, N. J. ;

Vasilevskiy, M. I. ;

Paul, O. .

JOURNAL OF APPLIED PHYSICS, 2011, 109 (12)

[3] Piezoresistive silicon thin film sensor array for biomedical applications [J].

Alpuim, P. ;

Correia, V. ;

Marins, E. S. ;

Rocha, J. G. ;

Trindade, I. G. ;

Lanceros-Mendez, S. .

THIN SOLID FILMS, 2011, 519 (14) :4574-4577

[4] Strain characterization of polycrystalline diamond and silicon systems [J].

Anastassakis, E .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (01) :249-258

[5]

[Anonymous], 1989, Practical Raman Spectroscopy

[6] Highly reproducible printable graphite strain gauges for flexible devices [J].

Bessonov, Alexander ;

Kirikova, Marina ;

Haque, Samiul ;

Gartseev, Ilya ;

Bailey, Marc J. A. .

SENSORS AND ACTUATORS A-PHYSICAL, 2014, 206 :75-80

[7] Epitaxial layer sheet resistance outside and under ohmic contacts measurements using electrostatic force microscopy [J].

Bresse, JF ;

Blayac, S .

SOLID-STATE ELECTRONICS, 2001, 45 (07) :1071-1076

[8] Plasma enhanced chemical vapor deposition of amorphous, polymorphous and microcrystalline silicon films [J].

Cabarrocas, PRI .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 2000, 266 :31-37

[9] Homogeneous nanocrystalline cubic silicon carbide films prepared by inductively coupled plasma chemical vapor deposition [J].

Cheng, Qijin ;

Xu, S. ;

Long, Jidong ;

Huang, Shiyong ;

Guo, Jun .

NANOTECHNOLOGY, 2007, 18 (46)

[10] Highly Flexible Microcrystalline Silicon n-Type TFT on PEN Bent to a Curvature Radius of 0.75 mm [J].

Dong, Hanpeng ;

Kervran, Yannick ;

Coulon, Nathalie ;

De Sagazan, Olivier ;

Jacques, Emmanuel ;

Mohammed-Brahim, Tayeb .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (10) :3278-3284

← 1 2 3 4 →