Enhancement of Conversion Efficiency of Cu2ZnSnS4 Thin Film Solar Cells by Improvement of Sulfurization Conditions

被引：44

作者：

Fukano, Tatsuo ^{[1
]}

Tajima, Shin ^{[1
]}

Ito, Tadayoshi ^{[1
]}

机构：

[1] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 06期

关键词：

Conversion efficiency;

D O I：

10.7567/APEX.6.062301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To enhance the conversion efficiency of Cu2ZnSnS4 (CZTS) thin film solar cells prepared by the sulfurization method, we investigated the formation process of the CZTS thin film. The holding temperature of the sulfurization was 580 degrees C. This study showed that the spreading resistance (SR) of the CZTS layer strongly depends on the holding time of the sulfurization. At the intermediate holding time (similar to 30 min), the SR of the CZTS layer came to a minimum, and the efficiency of the CZTS solar cell came to a maximum. A 7.6% efficiency CZTS solar cell without a high-resistance buffer layer and an antireflection coating was fabricated. (C) 2013 The Japan Society of Applied Physics

引用

页数：3

共 15 条

[1] Device characteristics of a 10.1% hydrazine-processed Cu2ZnSn(Se,S)4 solar cell [J].

Barkhouse, D. Aaron R. ;

Gunawan, Oki ;

Gokmen, Tayfun ;

Todorov, Teodor K. ;

Mitzi, David B. .

PROGRESS IN PHOTOVOLTAICS, 2012, 20 (01) :6-11

[2] Correlation between physical, electrical, and optical properties of Cu2ZnSnSe4 based solar cells [J].

Brammertz, G. ;

Buffiere, M. ;

Mevel, Y. ;

Ren, Y. ;

Zaghi, A. E. ;

Lenaers, N. ;

Mols, Y. ;

Koeble, C. ;

Vleugels, J. ;

Meuris, M. ;

Poortmans, J. .

APPLIED PHYSICS LETTERS, 2013, 102 (01)

[3]

Cao Y., J AM CHEM S IN PRESS, DOI [10 1021/ja.3057985, DOI 10.1021/JA.3057985]]

[4]

Eguchi T., 2011, PVSEC 21

[5] Cu2ZnSnS4-type thin film solar cells using abundant materials [J].

Jimbo, Kazuo ;

Kimura, Ryoichi ;

Kamimura, Tsuyoshi ;

Yamada, Satoru ;

Maw, Win Shwe ;

Araki, Hideaki ;

Oishi, Koichiro ;

Katagiri, Hironorl .

THIN SOLID FILMS, 2007, 515 (15) :5997-5999

[6] Cu2ZnSnS4 thin film solar cells [J].

Katagiri, H .

THIN SOLID FILMS, 2005, 480 :426-432

[7] Enhanced conversion efficiencies of Cu2ZnSnS4-based thin film solar cells by using preferential etching technique [J].

Katagiri, Hironori ;

Jimbo, Kazuo ;

Yamada, Satoru ;

Kamimura, Tsuyoshi ;

Maw, Win Shwe ;

Fukano, Tatsuo ;

Ito, Tadashi ;

Motohiro, Tomoyoshi .

APPLIED PHYSICS EXPRESS, 2008, 1 (04) :0412011-0412012

[8] Defect formation and phase stability of Cu2ZnSnS4 photovoltaic material [J].

Nagoya, Akihiro ;

Asahi, Ryoji ;

Wahl, Roman ;

Kresse, Georg .

PHYSICAL REVIEW B, 2010, 81 (11)

[9] The crystallisation of Cu2ZnSnS4 thin film solar cell absorbers from co-electroplated Cu-Zn-Sn precursors [J].

Schurr, R. ;

Hoelzing, A. ;

Jost, S. ;

Hock, R. ;

Voss, T. ;

Schulze, J. ;

Kirbs, A. ;

Ennaoui, A. ;

Lux-Steiner, M. ;

Weber, A. ;

Koetschau, I. ;

Schock, H. -W. .

THIN SOLID FILMS, 2009, 517 (07) :2465-2468

[10] Control of an interfacial MoSe2 layer in Cu2ZnSnSe4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier [J].

Shin, Byungha ;

Zhu, Yu ;

Bojarczuk, Nestor A. ;

Chey, S. Jay ;

Guha, Supratik .

APPLIED PHYSICS LETTERS, 2012, 101 (05)

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