Amorphous Silicon Single-Junction Thin-Film Solar Cell Exceeding 10% Efficiency by Design Optimization

被引:48
作者
Kabir, Mohammed Ikbal [1 ]
Shahahmadi, Seyed A. [2 ]
Lim, Victor [2 ]
Zaidi, Saleem [2 ]
Sopian, Kamaruzzaman [2 ]
Amin, Nowshad [1 ,2 ,3 ]
机构
[1] Natl Univ Malaysia, Fac Engn & Built Environm, Dept Elect Elect & Syst Engn, Bangi 43600, Malaysia
[2] Natl Univ Malaysia, SERI, Bangi 43600, Malaysia
[3] King Saud Univ, Coll Engn, CEREM, Riyadh 11421, Saudi Arabia
关键词
A-SI-H; MU-C-SI; TEMPERATURE-DEPENDENCE; P-LAYER; PERFORMANCE; CRYSTALLINE; IMPROVEMENT; CVD;
D O I
10.1155/2012/460919
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The conversion efficiency of a solar cell can substantially be increased by improved material properties and associated designs. At first, this study has adopted AMPS-1D (analysis of microelectronic and photonic structures) simulation technique to design and optimize the cell parameters prior to fabrication, where the optimum design parameters can be validated. Solar cells of single junction based on hydrogenated amorphous silicon (a-Si:H) have been analyzed by using AMPS-1D simulator. The investigation has been made based on important model parameters such as thickness, doping concentrations, bandgap, and operating temperature and so forth. The efficiency of single junction a-Si:H can be achieved as high as over 19% after parametric optimization in the simulation, which might seem unrealistic with presently available technologies. Therefore, the numerically designed and optimized a-SiC:H/a-SiC:H-buffer/a-Si:H/a-Si:H solar cells have been fabricated by using PECVD (plasma-enhanced chemical vapor deposition), where the best initial conversion efficiency of 10.02% has been achieved (V-oc = 0.88 V, J(sc) = 15.57 mA/cm(2) and FF = 0.73) for a small area cell (0.086 cm(2)). The quantum efficiency (QE) characteristic shows the cell's better spectral response in the wavelength range of 400 nm-650 nm, which proves it to be a potential candidate as the middle cell in a-Si-based multijunction structures.
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页数:7
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