Effect of Growth Parameters and Annealing Atmosphere on the Properties of Cu2ZnSnS4 Thin Films Deposited by Cosputtering

被引：26

作者：

Khalkar, Arun ^{[1
]}

Lim, Kwang-Soo ^{[1
]}

Yu, Seong-Man ^{[1
]}

Patole, Shashikant P. ^{[2
]}

Yoo, Ji-Beom ^{[1
,2
]}

机构：

[1] Sungkyunkwan Univ, SKKU Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Suwon 440746, South Korea

来源：

INTERNATIONAL JOURNAL OF PHOTOENERGY | 2013年 / 2013卷

关键词：

SOLAR-CELLS; STANNITE;

D O I：

10.1155/2013/690165

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Cu2ZnSnS4 (CZTS) thin films were deposited using the cosputtering technique. The growth parameters, such as working pressure, target powers, and postannealing atmosphere, were optimized for CZTS films deposition. A comparative study between post annealing using sulfur vapor in a quartz tube furnace and sulfurization chamber using H2S gas was carried out to optimize the kesterite Cu2ZnSnS4 phase. 10 min annealing at 530 degrees C in the furnace in sulfur vapor eliminated all the secondary phases and formed kesterite Cu2ZnSnS4. The diffusion of sulfur in the film during the annealing process enhanced the crystallinity of the film. The kesterite Cu2ZnSnS4 phase was confirmed by X-ray diffraction, Raman scattering, and optical measurements. The film showed phonon peaks corresponding to the kesterite CZTS, high-absorption coefficient (1.1 x 10(5) cm(-1)), and desired optical direct band gap (1.5 eV).

引用

页数：7

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