A Series Stacked IGBT Switch With Robustness Against Short-Circuit Fault for Pulsed Power Applications

The limited value of the insolated-gate bipolar transistors (IGBTs) blocking voltage is an important issue for applying these devices to the high-voltage power converters. An effective solution is to use a series configuration of these devices in order to achieve higher voltage ratings in addition to save the interesting features such as fast rising time. To reach this goal, acceptable equal voltage sharing for the IGBTs are provided by the series stacking schemes in the normal operation. However, a considerable difference in their voltage level will be occurred in the short-circuit condition. Although the IGBT can withstand the short-circuit current in a defined time, the occurred high voltage stress for the IGBT is fatal in such condition. To solve the mentioned problem, this paper proposes a short-circuit protection system suitable for the series stacked IGBTs. Using this proposal, the safe voltage level for IGBTs as well as the adequate time for the performance of the detection and elimination of the short-circuit fault will be provided. Each IGBT can have a different short-circuit current in the active region since the proposed scheme makes the IGBTs independent in terms of the current in the series structure. An external resistor added to the IGBTs emitter improves the equality of the IGBTs short-circuit currents and consequently their voltage sharing. This resistor controls the system short-circuit current by changing the operating point of IGBTs in active region in the short-circuit fault. The experimental and simulation results show that the safe condition is provided for the IGBTs under the short-circuit fault.