Improved luminescence quality with an asymmetric confinement potential in Si-based type-II quantum wells grown on a graded SiGe relaxed buffer

被引：5
|
作者：
Fukatsu, S [1 ]
Usami, N [1 ]
Shiraki, Y [1 ]
机构：
[1] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO 153,JAPAN
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 03期
关键词：
D O I：
10.1116/1.588867
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new class of Si-based quantum confined geometry is demonstrated using a combination of oppositely strained layers grown on a step-graded relaxed SiGe buffer. The role of heterointerfaces is revealed as the controlling mechanism of the exciton localization, which results in enhanced no-phonon transition intensity. (C) 1996 American Vacuum Society.
引用
收藏
页码：2387 / 2390
页数：4
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