Structure, microstructure, ferroelectric/electromechanical properties and retention characteristics of [Bi1-x Nb x ]FeO3 thin films

被引:11
|
作者
Simoes, A. Z. [2 ]
Cavalcante, L. S. [1 ,3 ]
Moura, F. [4 ]
Batista, N. C. [1 ]
Longo, E. [3 ]
Varela, J. A. [3 ]
机构
[1] UESPI, CCN, Dept Quim, BR-64002150 Teresina Pi, Brazil
[2] UNESP, Fac Engn Guaratingueta, BR-12516410 Guaratingueta, SP, Brazil
[3] Univ Estadual Paulista, LIEC, IQ, BR-14801907 Araraquara, SP, Brazil
[4] Univ Fed Itajuba, UNIFEI, BR-3590037 Itabira Mg, Brazil
来源
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2012年 / 109卷 / 03期
基金
巴西圣保罗研究基金会;
关键词
MULTIFERROIC BIFEO3; ELECTRIC PROPERTIES; MAGNETIC-PROPERTIES; FERROELECTRIC PROPERTIES; DIELECTRIC-PROPERTIES; SUBSTITUTION; THICKNESS; BEHAVIOR; TEXTURE; RAMAN;
D O I
10.1007/s00339-012-7104-2
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this work, we report the structure, microstructure, ferroelectric/electromechanical properties, and retention characteristics of [Bi1-x Nb (x) ]FeO3 (BNFO) thin films [x=0,0.025,0.05, and 0.1] prepared by the polymeric precursor method. X-ray patterns analyses and Rietveld refinement data confirmed that BNFO thin films have a rhombohedral structure and can be obtained at 773 K for 2 h in static air. However, a small quantity of deleterious phase related to Bi2Fe4O9 was observed with the addition of niobium (Nb). Structural refinement data indicated that the substitution of bismuth (Bi) by Nb in the A-site leads to a reduction in lattice parameters and the unit cell volume. Supercell models representing the [BiO6],[NbO6], and [FeO6] clusters which are present in the rhombohedral lattice are shown here. Atomic force microscopy images showed a reduction in the average grain size of films with the substitution of Bi by Nb. Ferroelectric and electromechanical properties were confirmed by hysteresis loops and piezoresponse force microscopy. Ferroelectric/electromechanical properties and retention characteristics indicated that the BNFO films with x=0.1 have a large remnant polarization, a low coercive field, a piezoelectric coefficient (d (33)a parts per thousand 38 pm/V), and good retention resistance.
引用
收藏
页码:703 / 714
页数:12
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