Temperature dependent current-voltage (I-V) characteristics of Al/n-Cadmium Selenide-Polyvinyl alcohol (Al/n-CdSe-PVA) Schottky diode

被引：0
|
作者：
Sharma, Mamta [1 ]
Tripathi, S. K. [1 ]
机构：
[1] Panjab Univ, Ctr Adv Study Phys, Dept Phys, Chandigarh 160014, India
来源：
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS | 2012年 / 6卷 / 1-2期
关键词：
Barrier height; Nanocomposite; Schottky diode; Nanorods; Polymer; POLYMER-BASED NANOCOMPOSITES; OPTICAL-PROPERTIES; FILMS;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The paper reports the fabrication and characterization of Al/n-Cadmium Selenide -Polyvinyl Alcohol (Al/n-CdSe-PVA) Schottky diode. I-V characteristics have been measured at different temperatures in the forward and reverse bias. The different parameters like ideality factor (n), the effective barrier height (phi(b)), the Richardson constant (A*) has been calculated. Temperature dependent barrier height and ideality factor is also studied. The series resistance (R-S) is calculated by using the Cheung's method. The reverse biased leakage current with the temperature have played important role in inhomogeneity of the barrier height. The recombination - tunneling mechanism is used to explain the conduction process in Schottky diode.
引用
收藏
页码：200 / 204
页数：5
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