The world-wide market size and potential of wide-bandgap semiconductor power electronic devices

Power electronics refers to the electronic processing of electrical energy. The field finds its roots in the late 1950s with the invention and commercialization of thyristors and diodes for industrial, commercial, and consumer power devices. The highest-power electronics are devices that operate at 2 kV and above. To date, improvements in high-power device performance have come from advances in device design. Now the key source of innovation is materials. The power limit on silicon devices is approaching and is believed to be a major barrier. Wide-bandgap semiconductors, including silicon carbide, group III nitrides, and chemical-vapor-deposited diamond, will be essential for powerful next-generation devices. Of wide-bandgap materials, silicon carbide wafers will be commercially available in 5-7 years. A market exceeding $1 billion by 2015 is projected for high power silicon carbide-based devices. Other materials yet experience difficulties in growing single crystal substrates, and their device commercialization is not expected until after 2010.