Iridium thin films deposited via pulsed laser deposition for future applications as transition-edge sensors

被引：16

作者：

Galeazzi, M ^{[1
]}

Chen, C ^{[1
]}

Cohn, JL ^{[1
]}

Gundersen, JO ^{[1
]}

机构：

[1] Univ Miami, Dept Phys, Coral Gables, FL 33124 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2004年 / 520卷 / 1-3期

关键词：

pulsed laser deposition; transition edge sensors; iridium;

D O I：

10.1016/j.nima.2003.11.241

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The University of Miami has recently started developing and studying high-resolution microcalorimeters operating near 100 mK for X-ray and particle physics and astrophysics. These detectors will be based on Transition Edge Sensors technology fabricated using iridium thin films deposited via the Pulsed Laser Deposition technique. We report here the preliminary result of the room temperature characterization of the Ir thin films, and an overview of future plans to use the films as transition edge sensors. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：293 / 295

页数：3

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