Valley Carrier Dynamics in Mono layer Molybdenum Disulfide from Helicity-Resolved Ultrafast Pump-Probe Spectroscopy

被引:218
作者
Wang, Qinsheng [1 ]
Ge, Shaofeng [1 ]
Li, Xiao
Qiu, Jun [1 ]
Ji, Yanxin [1 ]
Feng, Ji [1 ,2 ]
Sun, Dong [1 ,2 ]
机构
[1] Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
[2] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
基金
中国国家自然科学基金; 高等学校博士学科点专项科研基金;
关键词
molybdenum disulfide; transition-metal dichalcogenides; ultrafast spectroscopy valley carrier dynamics; disorder; BAND-GAP RENORMALIZATION; MOS2 ATOMIC LAYERS; ELECTRONIC-STRUCTURE; POLARIZATION; MONOLAYERS; GROWTH; WSE2;
D O I
10.1021/nn405419h
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We investigate the valley-related carrier dynamics in monolayer molybdenum disulfide using helicity-resolved nondegenerate ultrafast pump-probe spectroscopy at the vicinity of the high-symmetry K point under the temperature down to 78 K. Mono layer molybdenum disulfide shows remarkable transient reflection signals, in stark contrast to bilayer and bulk molybdenum disulfide due to the enhancement of many-body effect at reduced dimensionality. The helicity-resolved ultrafast time-resolved result shows that the valley polarization is preserved for only several picoseconds before the scattering process makes it undistinguishable. We suggest that the dynamical degradation of valley polarization is attributable primarily to the exciton trapping by defect states in the exfoliated molybdenum disulfide samples. Our experiment and a tight-binding model analysis also show that the perfect valley circular dichroism selectivity is fairly robust against disorder at the K point but quickly decays from the high-symmetry point in the momentum space in the presence of disorder.
引用
收藏
页码:11087 / 11093
页数:7
相关论文
共 37 条
[21]  
Mak KF, 2012, NAT NANOTECHNOL, V7, P494, DOI [10.1038/nnano.2012.96, 10.1038/NNANO.2012.96]
[22]   Electrical control of neutral and charged excitons in a monolayer semiconductor [J].
Ross, Jason S. ;
Wu, Sanfeng ;
Yu, Hongyi ;
Ghimire, Nirmal J. ;
Jones, Aaron M. ;
Aivazian, Grant ;
Yan, Jiaqiang ;
Mandrus, David G. ;
Xiao, Di ;
Yao, Wang ;
Xu, Xiaodong .
NATURE COMMUNICATIONS, 2013, 4
[23]   BAND-GAP RENORMALIZATION OF OPTICALLY-EXCITED SEMICONDUCTOR QUANTUM-WELLS [J].
RYAN, JC ;
REINECKE, TL .
PHYSICAL REVIEW B, 1993, 47 (15) :9615-9620
[24]   Robust optical emission polarization in MoS2 monolayers through selective valley excitation [J].
Sallen, G. ;
Bouet, L. ;
Marie, X. ;
Wang, G. ;
Zhu, C. R. ;
Han, W. P. ;
Lu, Y. ;
Tan, P. H. ;
Amand, T. ;
Liu, B. L. ;
Urbaszek, B. .
PHYSICAL REVIEW B, 2012, 86 (08)
[25]   MANY-PARTICLE EFFECTS AND NONLINEAR OPTICAL-PROPERTIES OF GAAS/(AL,GA)AS MULTIPLE-QUANTUM-WELL STRUCTURES UNDER QUASI-STATIONARY EXCITATION CONDITIONS [J].
SCHLAAD, KH ;
WEBER, C ;
CUNNINGHAM, J ;
HOOF, CV ;
BORGHS, G ;
WEIMANN, G ;
SCHLAPP, W ;
NICKEL, H ;
KLINGSHIRN, C .
PHYSICAL REVIEW B, 1991, 43 (05) :4268-4275
[26]   Exciton Dynamics in Suspended Mono layer and Few-Layer MoS2 2D Crystals [J].
Shi, Hongyan ;
Yan, Rusen ;
Bertolazzi, Simone ;
Brivio, Jacopo ;
Gao, Bo ;
Kis, Andras ;
Jena, Debdeep ;
Xing, Huili Grace ;
Huang, Libai .
ACS NANO, 2013, 7 (02) :1072-1080
[27]  
Sim Sangwan, 2013, ARXIV13082023
[28]   Emerging Photoluminescence in Monolayer MoS2 [J].
Splendiani, Andrea ;
Sun, Liang ;
Zhang, Yuanbo ;
Li, Tianshu ;
Kim, Jonghwan ;
Chim, Chi-Yung ;
Galli, Giulia ;
Wang, Feng .
NANO LETTERS, 2010, 10 (04) :1271-1275
[29]   DIMENSIONALITY DEPENDENCE OF THE BAND-GAP RENORMALIZATION IN TWO-DIMENSIONAL AND 3-DIMENSIONAL ELECTRON-HOLE PLASMAS IN GAAS [J].
TRANKLE, G ;
LEIER, H ;
FORCHEL, A ;
HAUG, H ;
ELL, C ;
WEIMANN, G .
PHYSICAL REVIEW LETTERS, 1987, 58 (04) :419-422
[30]   GENERAL RELATION BETWEEN BAND-GAP RENORMALIZATION AND CARRIER DENSITY IN TWO-DIMENSIONAL ELECTRON-HOLE PLASMAS [J].
TRANKLE, G ;
LACH, E ;
FORCHEL, A ;
SCHOLZ, F ;
ELL, C ;
HAUG, H ;
WEIMANN, G ;
GRIFFITHS, G ;
KROEMER, H ;
SUBBANNA, S .
PHYSICAL REVIEW B, 1987, 36 (12) :6712-6714