Persistent photoconductivity and electron mobility in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP quantum-well structures

被引：6

作者：

Kulbachinskii, V. A. ^{[1
]}

Lunin, R. A. ^{[1
]}

Yuzeeva, N. A. ^{[1
,3
]}

Vasilievskii, I. S. ^{[2
]}

Galiev, G. B. ^{[3
]}

Klimov, E. A. ^{[3
]}

机构：

[1] Moscow MV Lomonosov State Univ, Dept Low Temp Phys & Superconduct, Moscow 119991, Russia

[2] Natl Res Nucl Univ MEPhI, Moscow 115409, Russia

[3] Russian Acad Sci, Inst Microwave Semicond Elect, Moscow 117105, Russia

来源：

SEMICONDUCTORS | 2013年 / 47卷 / 07期

关键词：

MILLIMETER-WAVE APPLICATIONS; TRANSISTOR; INGAAS; GROWTH; SEMICONDUCTORS; DESIGN; LAYERS; HEMTS; GAAS;

D O I：

10.1134/S1063782613070130

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The influence of the width of the quantum well L and doping on the band structure, scattering, and electron mobility in nanoheterostructures with an isomorphic In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well grown on an InP substrate are investigated. The quantum and transport mobilities of electrons in the dimensionally quantized subbands are determined using Shubnikov-de Haas effect measurements. These mobilities are also calculated for the case of ionized-impurity scattering taking into account intersub-band electron transitions. It is shown that ionized-impurity scattering is the dominant mechanism of electron scattering. At temperatures T < 170 K, persistent photoconductivity is observed, which is explained by the spatial separation of photoexcited charge carriers.

引用

页码：935 / 942

页数：8

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