Growth and Characterization of MgxZn1-xO Thin Films by Aerosol-Assisted Chemical Vapor Deposition (AACVD)

被引:20
作者
Shukla, Akash [1 ]
Kaushik, Vipin K. [2 ]
Prasher, Dixit [1 ]
机构
[1] Rawal Inst Engn & Technol, Faridabad 121001, India
[2] Shri GS Inst Technol & Sci, Dept Appl Phys, Indore 452003, Madhya Pradesh, India
基金
英国科研创新办公室;
关键词
ZnO; MgxZn1-xO; MgZnO; thin films; CVD; XRD; SOL-GEL METHOD; ZNO NANOWIRES; OPTICAL-PROPERTIES; HYDROGEN STORAGE; ROOM-TEMPERATURE; NANOSTRUCTURES; TRANSISTORS;
D O I
10.1007/s13391-013-3039-9
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The growth and characterization of MgxZn1-xO thin films by aerosol-assisted chemical vapor deposition (AACVD) technique is reported in this paper. We have grown the thin films of ZnO by adding varying concentrations of magnesium (Mg) on a glass substrate. The precursor from which the MgxZn1-xO thin films were grown was made up of a mixture of zinc acethylacetonate and magnesium acetate tetrahydrate in boiled isopropyl alcohol. Oxygen gas was used as a carrier gas and substrate temperature was maintained at 400 degrees C. MgxZn1-xO thin films were finally characterized by x-ray diffraction (XRD), atomic force microscopy (AFM) and UV-VIS-NIR. spectroscopy. XRD results show that MgxZn1-xO thin films displayed a wurtzite structure and addition of Mg leads to a slight shift towards higher 2-theta values. AFM results show that MgZnO thin films were uniformly covered with nano flakes and their size decreases with an increase in Mg content. Optical studies show that with the increase of Mg content, transparency as well energy band gap of the MgxZn1-xO thin films increases, which also agrees with the reported values.
引用
收藏
页码:61 / 65
页数:5
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