Reliability of ultrathin gate oxides for ULSI devices

被引：10

作者：

Chang, CY ^{[1
]}

Chen, CC

Lin, HC

Liang, MS

Chien, CH

Huang, TY

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu 30039, Taiwan

[2] Natl Nano Device Labs, Hsinchu, Taiwan

[3] Taiwan Semicond Mfg Co Ltd, Hsinchu, Taiwan

来源：

MICROELECTRONICS RELIABILITY | 1999年 / 39卷 / 05期

关键词：

D O I：

10.1016/S0026-2714(99)00037-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultrathin gate oxide, which is essential for low supply voltage and high driving capability, is indispensable for the continued scaling of ULSI technologies towards smaller and faster devices. Needless to say, the reliability of ultrathin oxide is of major concerns in the manufacturing of the state-of-the-art metal-oxide-semiconductor devices. This payer reviews the reliability issues regarding ultrathin gate oxide for present and future ULSI technologies. Issues including gate leakage current, time-dependent dielectric breakdown, poly-gate depletion, boron penetration, and plasma process-induced damage will be addressed. Several techniques such as nitrided oxide and alternative processes, which are proposed to improve gate oxide reliabilities, are also discussed. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：553 / 566

页数：14

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