Exploitation of Polarization in Back-Illuminated AlGaN Avalanche Photodiodes

被引：25

作者：

Dong, Ke Xiu ^{[1
]}

Chen, Dun Jun ^{[1
]}

Lu, Hai ^{[1
]}

Liu, Bin ^{[1
]}

Han, Ping ^{[1
]}

Zhang, Rong ^{[1
]}

Zheng, You Dou ^{[1
]}

机构：

[1] Nanjing Univ, Sch Elect Sci & Engn, Key Lab Adv Photon & Elect Mat, Nanjing Natl Lab Microstruct, Nanjing 210093, Jiangsu, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2013年 / 25卷 / 15期

关键词：

Avalanche photodiodes; deep ultraviolet; polarization field; GAN;

D O I：

10.1109/LPT.2013.2267538

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To improve the performances of separate absorption and multiplication AlGaN avalanche photodiodes (APDs), a polarization field and a polarization doping effect are introduced into the APDs by adjusting the Al composition of the p-AlGaN layer. The calculated results show that the polarization-induced electric field, which has the same direction as the reverse bias in the multiplication layer, can significantly lower the avalanche breakdown voltage. Further, the maximum multiplication gain increases pronouncedly due to the polarization-assisted enhancement of the ionization electric field at the point of maximum gain. In addition, the composition graded p-AlGaN layer can also improve device performances through the polarization doping effect. The employments of the polarization field and polarization doping can increase the maximum multiplication gain by as much as 225%.

引用

页码：1510 / 1513

页数：4

共 16 条

[1] Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures [J].