Magnetic and Electronic Properties of Point Defects in ZrO2

被引:11
作者
Boujnah, M. [1 ]
Labrim, H. [2 ]
Allam, K. [3 ]
Belhaj, A. [2 ]
Benyoussef, A. [1 ,4 ,5 ]
El Kenz, A. [1 ]
Belhorma, B. [2 ]
El Bouari, A. [3 ]
机构
[1] Univ Mohammed 5, Fac Sci, Dept Phys, Lab Magnetism & Phys High Energies,URAC 12, Rabat, Morocco
[2] Natl Ctr Energy Sci & Nucl Tech, Rabat, Morocco
[3] UH2M, Fac Sci Ben MSik, Lab Chim Mat Solides, Casablanca, Morocco
[4] MASCIR Fdn, Inst Nanomat & Nanotechnolog, Rabat 10100, Morocco
[5] Hassan II Acad Sci & Technol, Rabat, Morocco
关键词
Native point defects; Diluted magnetic semiconductors; Curie temperature; ZrO2; Half-metal; Double-exchange mechanism; KKR-CPA method; MATERIALS DESIGN; SEMICONDUCTOR SPINTRONICS; FERROMAGNETISM; PERSPECTIVE; EXCHANGE;
D O I
10.1007/s10948-012-1826-4
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using the Korringa-Kohn-Rostoker Coherent Potential Approximation (KKR-CPA) method in connection with the Generalized Gradient Approximation (GGA), we study the magnetic and electronic properties of different point defects in cubic ZrO2. In particular, we discuss the zirconium interstitial (Zr-i), zirconium antisite (Zr-O), zirconium vacancy (V-Zr), oxygen interstitial (O-i), oxygen antisite (O-Zr), and oxygen vacancy (V-O) defects. It has been shown that oxygen vacancy and zirconium interstitial (V-O, Zr-i) are n-type, while the other point defects are p-type. The magnetic moments are observed only in the oxygen interstitial and antisite (O-i, O-Zr) cases. The corresponding ferromagnetic states are more stable than the spin-glass states. It has been found that the mechanism responsible of such stabilities is the double exchange. Based on Mean Field Approximation (MFA), the Curie temperature (T-C) is estimated. Moreover, it has been found that the O-i and O-Zr defects provide half-metallic properties being the responsible for ferromagnetism.
引用
收藏
页码:2429 / 2434
页数:6
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