Band gap and band offsets of GaNAsBi lattice matched to GaAs substrate

被引：27
|
作者：
Nacer, Said [1 ]
Aissat, Abdelkader [1 ]
Ferdjani, Kais [1 ]
机构：
[1] Univ Blida, Dept Elect, Blida, Algeria
来源：
OPTICAL AND QUANTUM ELECTRONICS | 2008年 / 40卷 / 09期
关键词：
GaNAsBi; Band anticrossing; Band offset; Band gap; Lattice matched;
D O I：
10.1007/s11082-008-9255-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we calculate the band gap and the band discontinuities of a GaN (y) AsBi (x) structure lattice matched to GaAs substrate using the conduction and the valence band anticrossing models at the same time. The results obtained show a good agreement with experiment. The nitrogen and the bismuth concentrations leading to a wavelength emission of 1.55 mu m have been determined (x = 3.5%, y = 2%). This structure shows a good electron confinement resulting in a high characteristic temperature.
引用
收藏
页码：677 / 683
页数：7
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