Band gap and band offsets of GaNAsBi lattice matched to GaAs substrate

被引：27

作者：

Nacer, Said ^{[1
]}

Aissat, Abdelkader ^{[1
]}

Ferdjani, Kais ^{[1
]}

机构：

[1] Univ Blida, Dept Elect, Blida, Algeria

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2008年 / 40卷 / 09期

关键词：

GaNAsBi; Band anticrossing; Band offset; Band gap; Lattice matched;

D O I：

10.1007/s11082-008-9255-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we calculate the band gap and the band discontinuities of a GaN (y) AsBi (x) structure lattice matched to GaAs substrate using the conduction and the valence band anticrossing models at the same time. The results obtained show a good agreement with experiment. The nitrogen and the bismuth concentrations leading to a wavelength emission of 1.55 mu m have been determined (x = 3.5%, y = 2%). This structure shows a good electron confinement resulting in a high characteristic temperature.

引用

页码：677 / 683

页数：7

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