Reliability investigation in SiGe HBT's

被引：4

作者：

Kuchenbecker, J ^{[1
]}

Borgarino, M ^{[1
]}

Bary, L ^{[1
]}

Cibiel, G ^{[1
]}

Llopis, O ^{[1
]}

Tartarin, JG ^{[1
]}

Graffeuil, J ^{[1
]}

Kovacic, S ^{[1
]}

Roux, JL ^{[1
]}

Plana, R ^{[1
]}

机构：

[1] CNRS, LAAS, F-31077 Toulouse, France

来源：

2001 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2001年

关键词：

DC life tests; hot carrier; low frequency noise; surface recombination;

D O I：

10.1109/SMIC.2001.942353

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper addresses some reliability properties of SiGe HBT's. We first have verified that no major problems were related to the SiGe layer through DC life tests experiments. In the second step, we have investigated the hot carrier influence on the DC, Noise and Microwave properties of these devices. We found that some degradation were occurring at the extrinsic base region in the vicinity of the emitter associated to some surface recombination. These assumptions have been described by physical simulations and confirmed by low frequency noise characterization. Finally, it has been demonstrated that microwave properties are affected by the mechanism and we propose a bias method that results to its minimization.

引用

页码：131 / 134

页数：4

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