Reversible carriers tunnelling in asymmetric coupled InGaN/GaN quantum wells

被引：0

作者：

Pei Xiao-Jiang ^{[1
]}

Guo Li-Wei ^{[1
]}

Wang Yang ^{[1
]}

Wang Xiao-Hui ^{[1
]}

Jia Hai-Qiang ^{[1
]}

Chen Hong ^{[1
]}

Zhou Jun-Ming ^{[1
]}

Wang Li ^{[2
]}

Tamai, N. ^{[2
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China

[2] Kwansei Gakuin Univ, Dept Chem, Sch Sci & Technol, Sanda, Hyogo 6691337, Japan

来源：

CHINESE PHYSICS LETTERS | 2008年 / 25卷 / 09期

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Temperature-dependent photoluminescence (PL) and time resolved photoluminescence (TRPL) are performed to study the PL characteristics and carrier transfer mechanism in asymmetric coupled InGaN/GaN multiple quantum wells (AS-QWs). Our results reveal that abnormal carrier tunnelling from the wide quantum well (WQW) to the narrow quantum well (NQW) is observed at temperature higher than about 100 K, while a normal carrier tunnelling from the NQW to the WQW is observed at temperature lower than 100 K. The reversible carrier tunnelling between the two QWs makes it possible to explore new types of temperature sensitive emission devices. It is shown that PL internal quantum efficiency (IQE) of the NQW is enhanced to about 46% due to the assistant of the abnormal carrier tunnelling.

引用

页码：3470 / 3473

页数：4

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