Oxygen-induced defect luminescence in porous silicon

被引：3
作者：
OKeeffe, P [1 ]
Komuro, S [1 ]
Morikawa, T [1 ]
Aoyagi, Y [1 ]
机构：
[1] TOYO UNIV, FAC ENGN, KAWAGOE, SAITAMA 350, JAPAN
来源：
APPLIED SURFACE SCIENCE | 1997年 / 113卷
关键词：
porous silicon; luminescence; time-resolved luminescence; oxidation; oxygen-induced defect states;
D O I：
10.1016/S0169-4332(96)00890-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Photoluminescence properties of oxidized porous silicon (PS) have been studied. Time-resolved photoluminescence (TRPL) measurements probed by tunable-excitation over the photon energy range 3.68-1.94 eV for temperatures of 20 K and room temperature show two emission bands, a high energy band (HEB) in the blue and a low energy band (LEE) in the red. The origin of the HEB PL is identified as oxygen-induced defect states with a broad distribution of 2.5 +/- 0.3 eV. These oxygen-induced defect states act as radiative recombination centers into which selective excitation of carriers results in the pronounced enhancement of the PL with the decay time of 5-6 ns. The LEE with the decay time of microsecond order is located around 2.1-2.0 eV and is similar to photoluminescence observed in amorphous materials characterized by carrier recombination via band-tail states.
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页码：135 / 139
页数：5
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