Mechanisms of band-edge emission in Mg-doped p-type GaN

被引：140
作者：
Smith, M
Chen, GD
Lin, JY
Jiang, HX
Salvador, A
Sverdlov, BN
Botchkarev, A
Morkoc, H
Goldenberg, B
机构：
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
[3] HONEYWELL TECHNOL CTR,PLYMOUTH,MN 55441
[4] XIAN JIAOTONG UNIV,DEPT APPL PHYS,XIAN 710049,PEOPLES R CHINA
来源：
APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 14期
关键词：
D O I：
10.1063/1.116282
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Time-resolved photoluminescence has been employed to study the mechanisms of band-edge emissions in Mg-doped p-type GaN. Two emission lines at about 290 and 550 meV below the band gap (Eg) have been observed. Their recombination lifetimes, dependencies on excitation intensity, and decay kinetics have demonstrated that the line at 290 meV below Eg is due to the conduction band-to-impurity transition involving shallow Mg impurities, while the Line at 550 meV below Eg is due to the conduction band-to-impurity transition involving doping related deep-level centers (or complexes). (C) 1996 American Institute of Physics.
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页码：1883 / 1885
页数：3
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